The Future of Electronics and Quantum Technologies: Unveiling the Secrets of White Graphene
In a groundbreaking collaboration between NYU Tandon School of Engineering and KAIST (Korea Advanced Institute of Science and Technology), an international research team has revolutionized the way we identify and characterize atomic-scale defects in hexagonal boron nitride (hBN) – the “white graphene” of the materials world.
This innovative technique holds the key to accelerating the development of next-generation electronics and quantum technologies, paving the way for a new era of scientific discovery and technological advancement.
The team’s remarkable discovery has brought to light the presence of individual carbon atoms replacing boron atoms in hBN crystals. By listening to the subtle electronic “noise” in specially designed transistors, they were able to detect these atomic defects, akin to hearing a whisper in a quiet room.
ACS Nano recognized the significance of this research by featuring it as the cover story for the October 22, 2024 edition, solidifying its importance in the scientific community.
“In this project, we essentially created a stethoscope for 2D materials,” explained Davood Shahrjerdi, one of the lead researchers behind the study. “By analyzing the minute fluctuations in electrical current, we can now ‘hear’ the behavior of single atomic defects with unprecedented clarity.”
Shahrjerdi, an associate professor at NYU Tandon’s Electrical and Computer Engineering Department, collaborated with Yong-Hoon Kim, Professor of Electrical Engineering at KAIST, to spearhead this pioneering research effort. Together, they lead the charge in the NYU-KAIST Next-Gen Semiconductor Devices and Chips research group, driving innovation and pushing the boundaries of scientific discovery.
Since the official launch of the NYU-KAIST partnership in 2022, the collaboration has blossomed into a thriving hub of over 200 faculty members, combining the unique strengths of both institutions to propel cutting-edge research and education initiatives forward.
Single-crystal hBN has captured the imagination of researchers worldwide, offering unparalleled potential in a multitude of scientific disciplines, from unconventional electronics to quantum technologies. Its atomically thin structure and exceptional insulating properties make it an ideal candidate for exploring exotic physical phenomena that were previously out of reach with traditional materials.
By building a transistor using thin layers of molybdenum disulfide and hBN, the NYU team was able to uncover a wealth of insights into the behavior of atomic defects within hBN crystals. These defects, when harnessed correctly, could potentially revolutionize the landscape of quantum technologies and pave the way for groundbreaking advancements in the field.
“We’ve essentially developed a ‘microscope’ that can ‘visualize’ individual atoms using electricity as our medium,” remarked Zhujun Huang, the paper’s first author and a former NYU Tandon ECE Ph.D. student. This novel approach combines experimental observations with advanced computer simulations to unravel the mysteries of atomic defects in 2D materials with unprecedented accuracy.
The implications of this research are far-reaching, with the potential to unlock a treasure trove of opportunities in the realm of electronics and quantum technologies. By understanding and controlling these defects, we may soon witness the birth of new quantum material platforms and secure communication systems with unparalleled precision and efficiency.
The journey into the atomic world of “white graphene” has only just begun, and with each discovery, we edge closer to a future where the seemingly impossible becomes not only possible but tangible reality. Stay tuned as we embark on this exhilarating scientific odyssey, unlocking the secrets of the universe one atom at a time.